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| Datasheet File OCR Text: |
| MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0305-2 FEATURES HIGH POWER P1dB=33.0dBm at 3.4GHz to 5.1GHz HIGH GAIN G1dB=22.0dB at 3.4GHz to 5.1GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature ( Ta= 25C ) SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm C C RATING 15 -10 25 -30 +80 -65 +175 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current* Input VSWR IDD VSWRin G1dB SYMBOL P1dB ( Ta= 25C ) UNIT dBm MIN. 32.0 20.0 TYP. MAX. 33.0 22.0 1.6 1.9 3.0 CONDITIONS VDD1=VDD2=VDD3 = 10V VGG= -5V dB A f = 3.4 - 5.1GHz * IDD = IDD1 + IDD2 + IDD3 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Mar.2006 TMD0305-2 PACKAGE OUTLINE (2-11E1A) 2.5 0.3 C2.0 Unit in mm : VDD1 : RF IN : VDD2 : VGG 10 0.3 15 0.3 6-2.54 0.2 18 0.3 : RF OUT : No Connection : VDD3 : GND 8-0.40.1 : VDD3 9 7-R0.4 2.0MIN. 11 0.3 2.0MIN. 0.1 0.05 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. Flanges of devices should be attached using screws and washers. Recommended torque is 0.18-0.20 N*m. 2 2.5MAX. 0.5 0.2 0.5 0.2 1.0 0.3 |
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